中南民族大学学报（自然科学版）2022，Vol.41Issue(6)：676-681,6.DOI:10.20056/j.cnki.ZNMDZK.20220606
钛镓掺杂氧化锌透明半导体薄膜的光电性能研究
Optical and electrical performance of titanium-gallium-zinc oxide transparent semiconductor thin films
摘要
Abstract
The transparent semiconductor thin films of titanium-gallium-zinc oxide（TiGaZnO）were prepared on glass substrates by magnetron sputtering. The effects of deposition pressure on optical and electrical characteristics were studied by UV-Vis spectrophotometer and Hall-effect measurement system. The results demonstrate that all the prepared samples possess high transparency in the visible light region. The average transmittance in the visible range exceeds 81.0%for all the prepared samples regardless of the deposition pressure. The deposition pressure has a significant impact on the optical and electrical characteristics of the prepared samples. The thin film fabricated at deposition pressure of 0.4 Pa has relatively better optoelectronic performance，with a high figure of merit of 4.034 × 103Ω-1?cm-1 and low resistivity of 1.685×10-3Ω?cm.关键词
磁控溅射技术/透明半导体/光电性能Key words
magnetron-sputtering technique/transparent semiconductor/optical and electrical performance分类
信息技术与安全科学引用本文复制引用
顾锦华,万鑫,龙浩,陈首部,钟志有..钛镓掺杂氧化锌透明半导体薄膜的光电性能研究 [J].中南民族大学学报（自然科学版）,2022,41(6):676-681,6.基金项目
国家自然科学基金资助项目（12075322）；教育部产学合作协同育人项目（202101144002，202101352053， 202101352054）；中南民族大学实验室研究项目 （）
