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Analysis of Drain Modulation for High Voltage GaN Power Amplifier Considering Parasitics

CHEN Xiaoqing CHENG Aiqiang ZHU Xinyi GU Liming TANG Shijun

南京航空航天大学学报：英文版2022，Vol.39Issue(5)：P.521-529,9.

南京航空航天大学学报：英文版2022，Vol.39Issue(5)：P.521-529,9.DOI:10.16356/j.1005-1120.2022.05.002

Analysis of Drain Modulation for High Voltage GaN Power Amplifier Considering Parasitics

CHEN Xiaoqing ¹CHENG Aiqiang ¹ZHU Xinyi ¹GU Liming ¹TANG Shijun¹

作者信息

1. Microwave Power Devices Department,Nanjing Electronic Devices Institute,Nanjing 210016,P.R.China
折叠

摘要

关键词

drain modulation/GaN/high voltage/power amplifier/parasitic inductance/N-MOS driver

分类

信息技术与安全科学

引用本文复制引用

CHEN Xiaoqing,CHENG Aiqiang,ZHU Xinyi,GU Liming,TANG Shijun..Analysis of Drain Modulation for High Voltage GaN Power Amplifier Considering Parasitics[J].南京航空航天大学学报：英文版,2022,39(5):P.521-529,9.

基金项目

supported by the Pri⁃mary Research&Development Plan of Jiangsu Province(Nos.BE2022070,BE2022070-2). （Nos.BE2022070,BE2022070-2）

南京航空航天大学学报：英文版

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ISSN：1005-1120

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