Clarifying the atomic origin of electron killers in β-Ga_(2)O_(3) from the first-principles study of electron capture ratesOACSCDCSTPCDEI
The emerging wide bandgap semiconductorβ-Ga_(2)O_(3) has attracted great interest due to its promising applications for high-power electronic devices and solar-blind ultraviolet photodetectors.Deep-level defects inβ-Ga_(2)O_(…查看全部>>
Zhaojun Suo;Linwang Wang;Shushen Li;Junwei Luo
State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,ChinaState Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,ChinaState Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,ChinaState Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China
物理学
wide bandgap semiconductor,defects,carrier trap,electron-phonon couplingfirst-principles calculation
《半导体学报:英文版》 2022 (11)
P.61-69,9
This work was supported by the National Key Research and Development Program of China under Grant No.2018YFB2200105the Key Research Program of Frontier Sciences,CAS under Grant No.ZDBS-LY-JSC019the National Natural Science Foundation of China(NSFC)under Grant Nos.11925407 and 61927901.
评论