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Clarifying the atomic origin of electron killers in β-Ga_(2)O_(3) from the first-principles study of electron capture rates

Zhaojun Suo Linwang Wang Shushen Li Junwei Luo

半导体学报:英文版2022，Vol.43Issue(11)：P.61-69,9.

半导体学报:英文版2022，Vol.43Issue(11)：P.61-69,9.DOI:10.1088/1674-4926/43/11/112801

Clarifying the atomic origin of electron killers in β-Ga_(2)O_(3) from the first-principles study of electron capture rates

Zhaojun Suo ¹Linwang Wang ²Shushen Li ¹Junwei Luo¹

作者信息

1. State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China
2. State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
折叠

摘要

关键词

wide bandgap semiconductor,defects,carrier trap,electron-phonon coupling/first-principles calculation

分类

数理科学

引用本文复制引用

Zhaojun Suo,Linwang Wang,Shushen Li,Junwei Luo..Clarifying the atomic origin of electron killers in β-Ga_(2)O_(3) from the first-principles study of electron capture rates[J].半导体学报:英文版,2022,43(11):P.61-69,9.

基金项目

This work was supported by the National Key Research and Development Program of China under Grant No.2018YFB2200105 （）

the Key Research Program of Frontier Sciences,CAS under Grant No.ZDBS-LY-JSC019 （）

the National Natural Science Foundation of China(NSFC)under Grant Nos.11925407 and 61927901. （NSFC）

半导体学报:英文版

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ISSN：1674-4926

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