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Plasma atomic layer etching of GaN/AlGaN materials and application: An overview

Lulu Guan Xingyu Li Dongchen Che Kaidong Xu Shiwei Zhuang

半导体学报:英文版2022，Vol.43Issue(11)：P.70-77,8.

半导体学报:英文版2022，Vol.43Issue(11)：P.70-77,8.DOI:10.1088/1674-4926/43/11/113101

Plasma atomic layer etching of GaN/AlGaN materials and application: An overview

Lulu Guan ¹Xingyu Li ¹Dongchen Che ²Kaidong Xu ³Shiwei Zhuang¹

作者信息

1. School of Physics and Electronic Engineering,Jiangsu Normal University,Xuzhou 221116,China
2. Jiangsu Leuven Instruments Co.Ltd,Xuzhou 221300,China
3. School of Physics and Electronic Engineering,Jiangsu Normal University,Xuzhou 221116,China Jiangsu Leuven Instruments Co.Ltd,Xuzhou 221300,China
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摘要

关键词

gallium nitride/plasma etching/atomic layer etching/self-limiting

分类

信息技术与安全科学

引用本文复制引用

Lulu Guan,Xingyu Li,Dongchen Che,Kaidong Xu,Shiwei Zhuang..Plasma atomic layer etching of GaN/AlGaN materials and application: An overview[J].半导体学报:英文版,2022,43(11):P.70-77,8.

基金项目

This work was supported by the Key Projects of Ministry of Science and Technology of the People’s Republic of China(Grant No.SQ2020YFF0407077) （Grant No.SQ2020YFF0407077）

the Industry-University-Research Cooperation Project of Jiangsu Province(Grant No.BY2020462) （Grant No.BY2020462）

the National Foreign Experts Bureau High-end Foreign Experts Project(Grant No.G20190114003) （Grant No.G20190114003）

Postgraduate Research&Practice Innovation Program of Jiangsu Province(Grant No.2021XKT1206). （Grant No.2021XKT1206）

半导体学报:英文版

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ISSN：1674-4926

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