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Improving reverse intersystem crossing of MR-TADF emitters for OLEDs

Xufeng Luo Lixiu Zhang Youxuan Zheng Liming Ding

半导体学报:英文版2022，Vol.43Issue(11)：P.5-8,4.

半导体学报:英文版2022，Vol.43Issue(11)：P.5-8,4.DOI:10.1088/1674-4926/43/11/110202

Improving reverse intersystem crossing of MR-TADF emitters for OLEDs

Xufeng Luo ¹Lixiu Zhang ²Youxuan Zheng ¹Liming Ding²

作者信息

1. State Key Laboratory of Coordination Chemistry,School of Chemistry and Chemical Engineering,Nanjing University,Nanjing 210023,China
2. Center for Excellence in Nanoscience(CAS),Key Laboratory of Nanosystem and Hierarchical Fabrication(CAS),National Center for Nanoscience and Technology,Beijing 100190,China
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摘要

关键词

emitter/occupied/luminous

分类

信息技术与安全科学

引用本文复制引用

Xufeng Luo,Lixiu Zhang,Youxuan Zheng,Liming Ding..Improving reverse intersystem crossing of MR-TADF emitters for OLEDs[J].半导体学报:英文版,2022,43(11):P.5-8,4.

基金项目

This work was supported by the National Natural Science Foundation of China(21975119) （21975119）

L.Ding thanks the open research fund of Songshan Lake Materials Laboratory(2021SLABFK02) （2021SLABFK02）

the National Natural Science Foundation of China(51922032 and 21961160720). （51922032 and 21961160720）

半导体学报:英文版

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ISSN：1674-4926

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