首页|期刊导航|光：科学与应用（英文版）|InGaN micro-light-emitting diodes monolithically grown on Si:achieving ultra-stable operation through polarization and strain engineering

InGaN micro-light-emitting diodes monolithically grown on Si:achieving ultra-stable operation through polarization and strain engineering

Yuanpeng Wu Yixin Xiao Ishtiaque Navid Kai Sun Yakshita Malhotra Ping Wang Ding Wang Yuanxiang Xu Ayush Pandey Maddaka Reddeppa Walter Shin Jiangnan Liu Jungwook Min Zetian Mi

光：科学与应用（英文版）2022，Vol.11Issue(10)：P.2540-2548,9.

光：科学与应用（英文版）2022，Vol.11Issue(10)：P.2540-2548,9.DOI:10.1038/s41377-022-00985-4

InGaN micro-light-emitting diodes monolithically grown on Si:achieving ultra-stable operation through polarization and strain engineering

Yuanpeng Wu ¹Yixin Xiao ¹Ishtiaque Navid ¹Kai Sun ²Yakshita Malhotra ¹Ping Wang ¹Ding Wang ¹Yuanxiang Xu ¹Ayush Pandey ¹Maddaka Reddeppa ¹Walter Shin ¹Jiangnan Liu ¹Jungwook Min ¹Zetian Mi¹

作者信息

1. Department of Electrical Engineering and Computer Science,University of Michigan,Ann Arbor,MI 48109,USA
2. Department of Materials Science and Engineering,University of Michigan,Ann Arbor,MI 48109,USA
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摘要

关键词

polarization/diodes/strain

分类

信息技术与安全科学

引用本文复制引用

Yuanpeng Wu,Yixin Xiao,Ishtiaque Navid,Kai Sun,Yakshita Malhotra,Ping Wang,Ding Wang,Yuanxiang Xu,Ayush Pandey,Maddaka Reddeppa,Walter Shin,Jiangnan Liu,Jungwook Min,Zetian Mi..InGaN micro-light-emitting diodes monolithically grown on Si:achieving ultra-stable operation through polarization and strain engineering[J].光：科学与应用（英文版）,2022,11(10):P.2540-2548,9.

基金项目

The work was supported by NS Nanotech Inc.We also acknowledge the financial support of the University of Michigan College of Engineering and NSF grant#DMR-0723032 and technical support from the Lurie Nanofabrication Facility and Michigan Center for Materials Characterization.Y.X.acknowledges support by the National Science Foundation Graduate Research Fellowship under Grant 1841052. （）

光：科学与应用（英文版）

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ISSN：2095-5545

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