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Al2O3/HfO2 Nanolaminate Dielectric Boosting IGZO-Based Flexible Thin-Film Transistors

Qiuwei Shi Izzat Aziz Jin-Hao Ciou Jiangxin Wang Dace Gao Jiaqing Xiong Pooi See Lee

纳微快报（英文）2022，Vol.14Issue(12)：79-90,12.

Al2O3/HfO2 Nanolaminate Dielectric Boosting IGZO-Based Flexible Thin-Film Transistors

Qiuwei Shi ¹Izzat Aziz ²Jin-Hao Ciou ¹Jiangxin Wang ¹Dace Gao ¹Jiaqing Xiong ¹Pooi See Lee¹

作者信息

1. School of Materials Science and Engineering,Nanyang Technological University,50 Nanyang Avenue,Singapore 639798,Singapore
2. School of Chemistry and Materials Science,Nanjing University of Information Science and Technology,Nanjing 210044,People's Republic of China
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摘要

关键词

Nanolaminate dielectric/Al2O3/HfO2/Thin-film transistors/Flexible electronic

Key words

Nanolaminate dielectric/Al2O3/HfO2/Thin-film transistors/Flexible electronic

引用本文复制引用

Qiuwei Shi,Izzat Aziz,Jin-Hao Ciou,Jiangxin Wang,Dace Gao,Jiaqing Xiong,Pooi See Lee..Al2O3/HfO2 Nanolaminate Dielectric Boosting IGZO-Based Flexible Thin-Film Transistors[J].纳微快报（英文）,2022,14(12):79-90,12.

基金项目

This work was supported by the Competitive Research Program(Award No.NRF-CRP13-2014-02),RIE2020 ASTAR AME IAF-ICP(I1801E0030),and Campus for Research Excellence and Technological Enterprise(CREATE)that was supported by the National Research Foundation,Prime Minister's Office,Singapore.Q.W.S.thanks to the Natural Science Foundation of China(52003122)and the"Longshan scholar"start-up founda-tion of NUIST.Open access funding provided by Shanghai Jiao Tong University. （Award No.NRF-CRP13-2014-02）

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ISSN：2311-6706

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