Recent Progress on Flexible Room-Temperature Gas Sensors Based on Metal Oxide SemiconductorOA

作者：Lang-Xi Ou;Meng-Yang Liu;Li-Yuan Zhu;David Wei Zhang;Hong-Liang Lu

作者单位：State Key Laboratory of ASIC and System,Shanghai Institute of Intelligent Electronics&Systems,School of Microelectronics,Fudan University,Shanghai 200433,People's Republic of ChinaState Key Laboratory of ASIC and System,Shanghai Institute of Intelligent Electronics&Systems,School of Microelectronics,Fudan University,Shanghai 200433,People's Republic of ChinaState Key Laboratory of ASIC and System,Shanghai Institute of Intelligent Electronics&Systems,School of Microelectronics,Fudan University,Shanghai 200433,People's Republic of ChinaState Key Laboratory of ASIC and System,Shanghai Institute of Intelligent Electronics&Systems,School of Microelectronics,Fudan University,Shanghai 200433,People's Republic of ChinaState Key Laboratory of ASIC and System,Shanghai Institute of Intelligent Electronics&Systems,School of Microelectronics,Fudan University,Shanghai 200433,People's Republic of China

中文关键词：Metal oxide semiconductorFlexible gas sensorRoom temperatureNanomaterials

英文关键词：Metal oxide semiconductorFlexible gas sensorRoom temperatureNanomaterials

刊名：《纳微快报（英文）》 2022 (12)

相关项目：先进互连技术的扩散阻挡层材料工艺开发和机理研究

页码/页数：310-351,42

基金：This work is supported by This work was supported by the National Key R&D Program of China(Nos.2020YFB2008604 and 2021YFB3202500),the National Natural Science Foundation of China(Nos.61874034 and 51861135105),the International Science and Technology Cooperation Program of Shanghai Science and Technology Innovation Action Plan(No.21520713300),and Fudan University-CIOMP Joint Fund(E02632Y7H0).Open access funding provided by Shanghai Jiao Tong University.