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Recent Progress on Flexible Room-Temperature Gas Sensors Based on Metal Oxide Semiconductor

Lang-Xi Ou Meng-Yang Liu Li-Yuan Zhu David Wei Zhang Hong-Liang Lu

纳微快报(英文)2022,Vol.14Issue(12):310-351,42.
纳微快报(英文)2022,Vol.14Issue(12):310-351,42.

Recent Progress on Flexible Room-Temperature Gas Sensors Based on Metal Oxide Semiconductor

Recent Progress on Flexible Room-Temperature Gas Sensors Based on Metal Oxide Semiconductor

Lang-Xi Ou 1Meng-Yang Liu 1Li-Yuan Zhu 1David Wei Zhang 1Hong-Liang Lu1

作者信息

  • 1. State Key Laboratory of ASIC and System,Shanghai Institute of Intelligent Electronics&Systems,School of Microelectronics,Fudan University,Shanghai 200433,People's Republic of China
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摘要

关键词

Metal oxide semiconductor/Flexible gas sensor/Room temperature/Nanomaterials

Key words

Metal oxide semiconductor/Flexible gas sensor/Room temperature/Nanomaterials

引用本文复制引用

Lang-Xi Ou,Meng-Yang Liu,Li-Yuan Zhu,David Wei Zhang,Hong-Liang Lu..Recent Progress on Flexible Room-Temperature Gas Sensors Based on Metal Oxide Semiconductor[J].纳微快报(英文),2022,14(12):310-351,42.

基金项目

This work is supported by This work was supported by the National Key R&D Program of China(Nos.2020YFB2008604 and 2021YFB3202500),the National Natural Science Foundation of China(Nos.61874034 and 51861135105),the International Science and Technology Cooperation Program of Shanghai Science and Technology Innovation Action Plan(No.21520713300),and Fudan University-CIOMP Joint Fund(E02632Y7H0).Open access funding provided by Shanghai Jiao Tong University. (Nos.2020YFB2008604 and 2021YFB3202500)

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