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Super high maximum on-state currents in 2D transistors

Xiaotian Sun Qiuhui Li Ruge Quhe Yangyang Wang Jing Lu

半导体学报（英文版）2022，Vol.43Issue(12)：9-11,3.

半导体学报（英文版）2022，Vol.43Issue(12)：9-11,3.DOI:10.1088/1674-4926/43/12/120401

Super high maximum on-state currents in 2D transistors

Xiaotian Sun ¹Qiuhui Li ²Ruge Quhe ³Yangyang Wang ⁴Jing Lu²

作者信息

1. College of Chemistry and Chemical Engineering,and Henan Key Laboratory of Function-Oriented Porous Materials,Luoyang Normal University,Luoyang 471934,China
2. State Key Laboratory for Mesoscopic Physics and School of Physics,Peking University,Beijing 100871,China
3. State Key Laboratory of Information Photonics and Optical Communications and School of Science,Beijing University of Posts and Telecommunications,Beijing 100876,China
4. Qian Xuesen Laboratory of Space Technology,China Academy of Space Technology,Beijing 100094,China
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摘要

引用本文复制引用

Xiaotian Sun,Qiuhui Li,Ruge Quhe,Yangyang Wang,Jing Lu..Super high maximum on-state currents in 2D transistors[J].半导体学报（英文版）,2022,43(12):9-11,3.

基金项目

This work was supported by the National Natural Sci-ence Foundation of China(91964101,12274002),the Funda-mental Research Funds for the Central Universities,the Fund of State Key Laboratory of Information Photonics and Optical Communications(Beijing University of Posts and Telecom-munications),the Foundation of He'nan Educational Commit-tee(23A430015),and the open research fund of National Center for International Research on Intelligent Nano-Materi-als and Detection Technology in Environmental Protection(SDGH2106)and the High-performance Computing Platform of Peking University and the MatCloud+high throughput ma-terials simulation engine. （91964101,12274002）

半导体学报（英文版）

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ISSN：1674-4926

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