首页|期刊导航|半导体学报(英文版)|Interfacial dynamics of GaP/Si(100)heterostructure grown by molecular beam epitaxy
半导体学报(英文版)2022,Vol.43Issue(12):33-39,7.DOI:10.1088/1674-4926/43/12/122101
Interfacial dynamics of GaP/Si(100)heterostructure grown by molecular beam epitaxy
Interfacial dynamics of GaP/Si(100)heterostructure grown by molecular beam epitaxy
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XPS/interfacial dynamics/GaP/Si(100)heterostructure/MBEKey words
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Tieshi Wei,Xuefei Li,Zhiyun Li,Wenxian Yang,Yuanyuan Wu,Zhiwei Xing,Shulong Lu..Interfacial dynamics of GaP/Si(100)heterostructure grown by molecular beam epitaxy[J].半导体学报(英文版),2022,43(12):33-39,7.基金项目
This work is supported in part by the National Key R&D Program(Grant No.2018YFB2003305),the National Natural Sci-ence Foundation of China(Grant Nos.61774165,61704186,and 61827823),and the program from SINANO(Y8AAQ11003 and Y4JAQ21005).We are thankful for the technical support from Nano Fabrication Facility,Platform for Characteriza-tion&Test,and Vacuum Interconnected Nanotech Worksta-tion of SINANO,CAS. (Grant No.2018YFB2003305)