首页|期刊导航|半导体学报（英文版）|A 4H-SiC semi-super-junction shielded trench MOSFET:p-pillar is grounded to optimize the electric field characteristics
A 4H-SiC semi-super-junction shielded trench MOSFET:p-pillar is grounded to optimize the electric field characteristics
Xiaojie Wang Dingqu Lin Shaoxiong Wu Yuning Zhang Deyi Fu Zhengyun Wu Feng Zhang Zhanwei Shen Guoliang Zhang Yuyang Miao Tiange Li Xiaogang Zhu Jiafa Cai Rongdun Hong Xiaping Chen
半导体学报（英文版）2022，Vol.43Issue(12)：85-93,9.
半导体学报（英文版）2022，Vol.43Issue(12)：85-93,9.DOI:10.1088/1674-4926/43/12/122802
A 4H-SiC semi-super-junction shielded trench MOSFET:p-pillar is grounded to optimize the electric field characteristics
A 4H-SiC semi-super-junction shielded trench MOSFET:p-pillar is grounded to optimize the electric field characteristics
摘要
关键词
breakdown voltage/specific on-resistance/silicon carbide/switching energy loss/super-junction-shield(SS)/trench gate MOSFET/grounded(G)/ungrounded(NG)Key words
breakdown voltage/specific on-resistance/silicon carbide/switching energy loss/super-junction-shield(SS)/trench gate MOSFET/grounded(G)/ungrounded(NG)引用本文复制引用
Xiaojie Wang,Dingqu Lin,Shaoxiong Wu,Yuning Zhang,Deyi Fu,Zhengyun Wu,Feng Zhang,Zhanwei Shen,Guoliang Zhang,Yuyang Miao,Tiange Li,Xiaogang Zhu,Jiafa Cai,Rongdun Hong,Xiaping Chen..A 4H-SiC semi-super-junction shielded trench MOSFET:p-pillar is grounded to optimize the electric field characteristics[J].半导体学报（英文版）,2022,43(12):85-93,9.基金项目
This work was supported by the National Natural Sci-ence Foundation of China(Grant No.62104222),the Natural Science Foundation of Fujian Province of China for Distin-guished Young Scholars(Grant No.2020J06002),the Science and Technology Project of Fujian Province of China(Grant No.2020I0001),the Science and Technology Key Projects of Xiamen(Grant No.3502ZCQ20191001),Shenzhen Science and Technology Program(Grant No.JSGG20201102-155800003),Jiangxi Provincial Natural Science Foundation(Grant No.20212ACB212005). （Grant No.62104222）
