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Plasma-Enhanced Atomic Layer Deposition of Amorphous Ga2O3 for Solar-Blind Photodetection

Ze-Yu Fan Guang-Wei Deng Qiang Zhou Yan-Bo Li Min-Ji Yang Bo-Yu Fan Andraž Mavrič Nadiia Pastukhova Matjaz Valant Bo-Lin Li Kuang Feng Dong-Liang Liu

电子科技学刊2022，Vol.20Issue(4)：331-344,14.

电子科技学刊2022，Vol.20Issue(4)：331-344,14.DOI:10.1016/j.jnlest.2022.100176

Plasma-Enhanced Atomic Layer Deposition of Amorphous Ga2O3 for Solar-Blind Photodetection

Ze-Yu Fan ¹Guang-Wei Deng ¹Qiang Zhou ¹Yan-Bo Li ¹Min-Ji Yang ¹Bo-Yu Fan ¹Andraž Mavrič ²Nadiia Pastukhova ²Matjaz Valant ²Bo-Lin Li ¹Kuang Feng ¹Dong-Liang Liu¹

作者信息

1. Institute of Fundamental and Frontier Sciences,University of Electronic Science and Technology of China,Chengdu 610054
2. Materials Research Laboratory,University of Nova Gorica,Nova Gorica SI-5000
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摘要

关键词

Amorphous gallium oxide (a-Ga2O3)/passivation layer/plasma enhanced atomic layer deposition (PE-ALD)/responsivity/solar-blind photodetector

Key words

Amorphous gallium oxide (a-Ga2O3)/passivation layer/plasma enhanced atomic layer deposition (PE-ALD)/responsivity/solar-blind photodetector

引用本文复制引用

Ze-Yu Fan,Guang-Wei Deng,Qiang Zhou,Yan-Bo Li,Min-Ji Yang,Bo-Yu Fan,Andraž Mavrič,Nadiia Pastukhova,Matjaz Valant,Bo-Lin Li,Kuang Feng,Dong-Liang Liu..Plasma-Enhanced Atomic Layer Deposition of Amorphous Ga2O3 for Solar-Blind Photodetection[J].电子科技学刊,2022,20(4):331-344,14.

基金项目

This work was supported by the National Natural Science Foundation of China under Grant No.21872019 and the Innovation Group Project of Sichuan Province under Grant No.20CXTD0090.This work was also partly supported by the Slovenian Research Agency under Grants No.P2-0412 and No.J2-2498 for A.Mavri?and M.Valant,and No.Z1-3189 for N.Pastukhova. （）

电子科技学刊

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ISSN：1674-862X

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