电子科技学刊2022,Vol.20Issue(4):356-374,19.DOI:10.1016/j.jnlest.2022.100177
Redox Memristors with Volatile Threshold Switching Behavior for Neuromorphic Computing
Redox Memristors with Volatile Threshold Switching Behavior for Neuromorphic Computing
摘要
关键词
Memristors/neuromorphic computing/threshold switchingKey words
Memristors/neuromorphic computing/threshold switching引用本文复制引用
Yu-Hao Wang,Dniele Ielmini,Xu-Meng Zhang,Qing Luo,Tian-Cheng Gong,Ya-Xin Ding,Yang Li,Wei Wang,Zi-Ang Chen,Nan Du,Erika Covi,Matteo Farronato..Redox Memristors with Volatile Threshold Switching Behavior for Neuromorphic Computing[J].电子科技学刊,2022,20(4):356-374,19.基金项目
This work was supported in part by the Ministry of Science and Technology of China under Grant No.2017YFA0206102 ()
in part by the National Natural Science Foundation of China under Grant No.61922083 ()
by the Strategic Priority Research Program of Chinese Academy of Sciences under Grant No.XDB44000000 ()
by the European Union's Horizon 2020 Research and Innovation Program with Grant Agreement No.824164 ()
by the German Research Foundation Projects MemCrypto under Grant No.GZ:DU 1896/2-1 and MemDPU under Grant No.GZ:DU 1896/3-1. ()