红外与毫米波学报2022，Vol.41Issue(6)：972-979,8.DOI:10.11972/j.issn.1001-9014.2022.06.005
基于梯度能带结构的高速非制冷中波红外HgCdTe探测器
High speed uncooled MWIR infrared HgCdTe photodetector based on graded bandgap structure
摘要
Abstract
A high-speed room-temperature mid-wave infrared HgCdTe photodetector based on graded bandgap structure was reported. This study explores a n-on-p homojunction structure on epitaxial HgCdTe,which achieves a total response time of 1. 33 ns(750 MHz)under zero bias voltage at 300 K,which is faster than commercial un? cooled MCT photovoltaic photodetectors and MWIR HgCdTe APDs under high reverse bias. The analysis based on one-dimensional equations shows that compositional grading in the absorber layer can form built-in electric field and the transport mechanism of carriers is changed,the model is confirmed by the comparisons of different graded HgCdTe photodetectors. Thereby,this work facilitates design of the high-speed HgCdTe MWIR detec? tors,and provides a promising method to optimize the ultrafast MWIR infrared photodetectors.关键词
碲镉汞/高速/中波红外/组分梯度Key words
HgCdTe/high speed/mid-wave infrared/component gradient引用本文复制引用
桑茂盛,徐国庆,乔辉,李向阳..基于梯度能带结构的高速非制冷中波红外HgCdTe探测器[J].红外与毫米波学报,2022,41(6):972-979,8.基金项目
Supported by the National Key Research and Development Program of China(2021YFA0715501) （2021YFA0715501）
