半导体学报:英文版2023，Vol.44Issue(1)：P.74-78,5.DOI:10.1088/1674-4926/44/1/012001
Gate tunable spatial accumulation of valley-spin in chemical vapor deposition grown 40°-twisted bilayer WS2
摘要
关键词
transition metal dichalcogenides/valleytronic devices/light-valley interactions/valley Hall effect分类
化学化工引用本文复制引用
Siwen Zhao,Gonglei Shao,Zheng Vitto Han,Song Liu,Tongyao Zhang..Gate tunable spatial accumulation of valley-spin in chemical vapor deposition grown 40°-twisted bilayer WS2[J].半导体学报:英文版,2023,44(1):P.74-78,5.基金项目
supported by the National Key R&D Program of China(No.2019YFA0307800) （No.2019YFA0307800）
financial support from the National Natural Science Foundation of China(Nos.22175060,21975067,92265203,11974357,12004259,12204287,U1932151) （Nos.22175060,21975067,92265203,11974357,12004259,12204287,U1932151）
Natural Science Foundation of Hunan Province of China(Nos.2021JJ10014,2021JJ30092) （Nos.2021JJ10014,2021JJ30092）
China Postdoctoral Science Foundation(Grant No.2022M723215)。 （Grant No.2022M723215）
