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Graphene Bridge Heterostructure Devices for Negative Differential Transconductance Circuit Applications

Minjong Lee Tae Wook Kim Chang Yong Park Kimoon Lee Takashi Taniguchi Kenji Watanabe Min-gu Kim Do Kyung Hwang Young Tack Lee

纳微快报（英文）2023，Vol.15Issue(2)：161-171,11.

Graphene Bridge Heterostructure Devices for Negative Differential Transconductance Circuit Applications

Minjong Lee ¹Tae Wook Kim ²Chang Yong Park ³Kimoon Lee ¹Takashi Taniguchi ⁴Kenji Watanabe ⁵Min-gu Kim ⁵Do Kyung Hwang ¹Young Tack Lee⁶

作者信息

1. Department of Electrical and Computer Engineering,Inha University,Incheon 22212,Republic of Korea
2. Department of Materials Science and Engineering,The University of Texas at Dallas,Richardson,TX 75080,USA
3. Center for Opto-Electronic Materials and Devices,Post-Silicon Semiconductor Institute,Korea Institute of Science and Technology(KIST),Seoul 02792,Republic of Korea
4. Department of Physics,Kunsan National University,Gunsan 54150,Republic of Korea
5. Advanced Materials Laboratory,National Institute for Materials Science,Tsukuba 305-0044,Japan
6. Department of Information and Communication Engineering,Inha University,Incheon 22212,Republic of Korea
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摘要

关键词

Graphene bridge/Heterostructure device/Non-classical transfer characteristics/Multi-value logic inverter/Frequency tripler

Key words

Graphene bridge/Heterostructure device/Non-classical transfer characteristics/Multi-value logic inverter/Frequency tripler

引用本文复制引用

Minjong Lee,Tae Wook Kim,Chang Yong Park,Kimoon Lee,Takashi Taniguchi,Kenji Watanabe,Min-gu Kim,Do Kyung Hwang,Young Tack Lee..Graphene Bridge Heterostructure Devices for Negative Differential Transconductance Circuit Applications[J].纳微快报（英文）,2023,15(2):161-171,11.

基金项目

Y.T.L.acknowledges the financial support from the National Research Foundation of Korea(NRF)(No.NRF-2021R1C1C1005235).D.K.H.acknowledges the financial support from the Korea Institute of Science and Technology(KIST)Institu-tion Program(No.2E31532). （NRF）

纳微快报（英文）

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ISSN：2311-6706

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