人工晶体学报2023，Vol.52Issue(2)：271-280,10.
射频磁控溅射法制备MoS2薄膜的最佳工艺参数研究
Optimal Process Parameters of Preparing MoS2 Films by RF Magnetron Sputtering
摘要
Abstract
MoS2 films were prepared on quartz substrate by radio frequency ( RF) magnetron sputtering. The effect of sputtering time, sputtering temperature, argon flow rate and sputtering power on the structure of MoS2 films was studied by orthogonal test method. The crystallinity, thickness and surface morphology of MoS2 films were analyzed by XRD, Raman, XPS, EDS and SEM, the optimal process parameters for preparing MoS2 films were obtained. It is found that the crystallinity of the sample is poor at higher or lower sputtering temperature, and the XRD diffraction peak of the sample is not obvious at lower sputtering temperature. When the temperature is 250 ℃, the sample has more XRD diffraction peaks and better crystallinity. According to the orthogonal test, sputtering temperature plays a crucial role in the crystallization of MoS2 , followed by argon flow rate. When sputtering temperature is 250 ℃, argon flow rate is 6 mL/min, sputtering time is 30 min, and sputtering power is 300 W or 400 W, the crystallinity of MoS2 film is better. The film prepared under this condition is thicker, but it points out the direction for future experiments. In the following experiments, sputtering temperature, sputtering power and argon flow rate can be kept unchanged. By shortening the time, films with a thickness of 58. 9 nm have been successfully prepared.关键词
MoS2薄膜/射频磁控溅射/二维材料/正交试验法/工艺参数Key words
MoS2 films/RF magnetron sputtering/two-dimensional material/orthogonal test method/process parameter分类
数理科学引用本文复制引用
张俊峰,孙再征,孔腾飞,蔡根旺,李亚平,胡莎,樊志琴..射频磁控溅射法制备MoS2薄膜的最佳工艺参数研究[J].人工晶体学报,2023,52(2):271-280,10.基金项目
National Natural Science Foundation of China(12104133) （12104133）
Henan University of Technology Graduate Education Reform Project （）
