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Emerging MoS2 Wafer-Scale Technique for Integrated Circuits

Zimeng Ye Chao Tan Xiaolei Huang Yi Ouyang Lei Yang Zegao Wang Mingdong Dong

纳微快报（英文）2023，Vol.15Issue(3)：129-170,42.

Emerging MoS2 Wafer-Scale Technique for Integrated Circuits

Zimeng Ye ¹Chao Tan ¹Xiaolei Huang ²Yi Ouyang ³Lei Yang ¹Zegao Wang ¹Mingdong Dong³

作者信息

1. College of Materials Science and Engineering,Sichuan University,Chengdu 610065,People's Republic of China
2. State Key Laboratory of Solidification Processing,Center of Advanced Lubrication and Seal Materials,Northwestern Polytechnical University,Xi'an 710072,People's Republic of China
3. Interdisciplinary Nanoscience Center,Aarhus University,8000 Aarhus C,Denmark
折叠

摘要

关键词

Wafer-scale growth/Molybdenum disulfide/Gas deposition/Integrated circuits

Key words

Wafer-scale growth/Molybdenum disulfide/Gas deposition/Integrated circuits

引用本文复制引用

Zimeng Ye,Chao Tan,Xiaolei Huang,Yi Ouyang,Lei Yang,Zegao Wang,Mingdong Dong..Emerging MoS2 Wafer-Scale Technique for Integrated Circuits[J].纳微快报（英文）,2023,15(3):129-170,42.

基金项目

This work was financially sup-ported by the National Natural Science Foundation of China(52002254,52272160),Sichuan Science and Technology Foundation(2020YJ0262,2021YFH0127,2022YFSY0045,2022YFH0083 and 23SYSX0060),the Chunhui plan of Ministry of Education,Fundamental Research Funds for the Central Univer-sities,China(YJ201893),the Open-Foundation of Key Laboratory of Laser Device Technology,China North Industries Group Corpo-ration Limited(Grant No.KLLDT202104),the foundation of the State Key Laboratory of Solidification Processing in NWPU(No.SKLSP202210)and the 2035-Plan of Sichuan University.Open access funding provided by Shanghai Jiao Tong University. （52002254,52272160）

纳微快报（英文）

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ISSN：2311-6706

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