中国铸造2023，Vol.20Issue(2)：159-178,20.
Review of solution growth techniques for 4H-SiC single crystal
Review of solution growth techniques for 4H-SiC single crystal
Gang-qiang Liang 1Hao Qian 2Yi-lin Su 1Lin Shi 2Qiang Li 1Yuan Liu2
作者信息
- 1. School of Materials Science and Engineering,Tsinghua University,Beijing 100084,China
- 2. Key Laboratory for Advanced Materials Processing Technology(Ministry of Education),Beijing 100084,China
- 折叠
摘要
关键词
wide-bandgap semiconductor/silicon carbide/bulk growth of single crystal/process parametersKey words
wide-bandgap semiconductor/silicon carbide/bulk growth of single crystal/process parameters分类
数理科学引用本文复制引用
Gang-qiang Liang,Hao Qian,Yi-lin Su,Lin Shi,Qiang Li,Yuan Liu..Review of solution growth techniques for 4H-SiC single crystal[J].中国铸造,2023,20(2):159-178,20.
