无机材料学报2023，Vol.38Issue(3)：343-349,7.DOI:10.15541/jim20220481
高温退火对PVT法生长的AlN晶体质量的影响
Effect of High-temperature Annealing on AlN Crystal Grown by PVT Method
摘要
Abstract
In the process of PVT growth of AlN crystals, there is difficult to maintain ideal thermodynamic equilibrium conditions, causing crystal defects being inevitably generated. High temperature annealing technology has received much attention due to their effectiveness in improving crystal integrity. In this paper, AlN samples grown by PVT method were annealed at high temperature in N2 atmosphere. In order to evaluate the crystalline quality and structural perfection of AlN before and after thermal annealing, high-resolution X-ray diffraction (HRXRD) and Raman spectrum were carried out. In addition, the impurity related band gap changes in the optical properties of AlN crystals were characterized by room temperature photoluminescence (PL) and absorption spectra. The crystal quality of these AlN crystals was significantly improved after annealing at 1400-1800 ℃. The full width at half maximum (FWHM) of the (10ˉ12) plane X-ray rocking curve decreased from 104.04 to 79.92 arcsec (1 arcsec=0.01592°) after annealing at 1400 ℃. As the annealing temperature increases, the absorption was significantly enhanced and the band gap became larger, indicating that the annealing process was beneficial to improve the quality of AlN crystals. The results of secondary ion mass spectrometry (SIMS) demonstrate that the annealing process reduces the C impurity, resulting in an increase in band gap of AlN crystal, which is consistent with the results of optical absorption.关键词
高温退火技术/AlN晶体/C杂质/带隙Key words
high temperature annealing technology/AlN crystal/C impurities/bandgap分类
通用工业技术引用本文复制引用
俞瑞仙,王国栋,王守志,胡小波,徐现刚,张雷..高温退火对PVT法生长的AlN晶体质量的影响[J].无机材料学报,2023,38(3):343-349,7.基金项目
Shenzhen Science and Technology Program(JCYJ20210324141607019) （JCYJ20210324141607019）
Natural Science Foundation of Shandong Province(ZR2022QF044) （ZR2022QF044）
National Natural Science Foundation of China(52202265) （52202265）
