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Trap analysis on Pt-AlGaN/GaN Schottky barrier diode through deep level transient spectroscopy

Ashish Kumar Jayjit Mukherjee D.S.Rawal K.Asokan D.Kanjilal

半导体学报:英文版2023，Vol.44Issue(4)：P.92-97,6.

Trap analysis on Pt-AlGaN/GaN Schottky barrier diode through deep level transient spectroscopy

Ashish Kumar ¹Jayjit Mukherjee ¹D.S.Rawal ¹K.Asokan ¹D.Kanjilal¹

作者信息

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摘要

关键词

deep traps/Pt-SBD/DLTS/rate window/defects

分类

信息技术与安全科学

引用本文复制引用

Ashish Kumar,Jayjit Mukherjee,D.S.Rawal,K.Asokan,D.Kanjilal..Trap analysis on Pt-AlGaN/GaN Schottky barrier diode through deep level transient spectroscopy[J].半导体学报:英文版,2023,44(4):P.92-97,6.

基金项目

the financial support received from the Department of Science and Technology,India through DST-INSPIRE Faculty scheme(DST/INSPIRE/04/2015/001572). （DST/INSPIRE/04/2015/001572）

半导体学报:英文版

OACSCDCSTPCDEI

ISSN：1674-4926

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