首页|期刊导航|半导体学报:英文版|Application of nano-patterned InGaN fabricated by selfassembled Ni nano-masks in green InGaN/GaN multiple quantum wells

Application of nano-patterned InGaN fabricated by selfassembled Ni nano-masks in green InGaN/GaN multiple quantum wells

Ruoshi Peng Shengrui Xu Xiaomeng Fan Hongchang Tao Huake Su Yuan Gao Jincheng Zhang Yue Hao

半导体学报:英文版2023，Vol.44Issue(4)：P.86-91,6.

半导体学报:英文版2023，Vol.44Issue(4)：P.86-91,6.DOI:10.1088/1674-4926/44/4/042801

Application of nano-patterned InGaN fabricated by selfassembled Ni nano-masks in green InGaN/GaN multiple quantum wells

Ruoshi Peng ¹Shengrui Xu ¹Xiaomeng Fan ¹Hongchang Tao ¹Huake Su ¹Yuan Gao ¹Jincheng Zhang ¹Yue Hao¹

作者信息

1. Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory,School of Microelectronics,Xi''dian University,Xi''an 710071,China
折叠

摘要

关键词

GaN/InGaN/nano-mask/nano-patterned/MQWs

分类

信息技术与安全科学

引用本文复制引用

Ruoshi Peng,Shengrui Xu,Xiaomeng Fan,Hongchang Tao,Huake Su,Yuan Gao,Jincheng Zhang,Yue Hao..Application of nano-patterned InGaN fabricated by selfassembled Ni nano-masks in green InGaN/GaN multiple quantum wells[J].半导体学报:英文版,2023,44(4):P.86-91,6.

基金项目

the National Natural Science Foundation of China(Grant No.62074120) （Grant No.62074120）

the State Key Laboratory on Integrated Optoelectronics(Grant No.IOSKL2018KF10) （Grant No.IOSKL2018KF10）

the Fundamental Research Funds for the Central Universities(Grant No.JB211108). （Grant No.JB211108）

半导体学报:英文版

OACSCDCSTPCDEI

ISSN：1674-4926

访问量0

下载量0

段落导航