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A new DRIE cut-off material in SOG MEMS process

Chaowei Si Yingchun Fu Guowei Han Yongmei Zhao Jin Ning Zhenyu Wei Fuhua Yang

半导体学报:英文版2023,Vol.44Issue(4):P.98-102,5.
半导体学报:英文版2023,Vol.44Issue(4):P.98-102,5.DOI:10.1088/1674-4926/44/4/044101

A new DRIE cut-off material in SOG MEMS process

Chaowei Si 1Yingchun Fu 1Guowei Han 1Yongmei Zhao 1Jin Ning 1Zhenyu Wei 1Fuhua Yang1

作者信息

  • 折叠

摘要

关键词

SOG process/DRIE cut-off layer/ITO film/foot effect

分类

信息技术与安全科学

引用本文复制引用

Chaowei Si,Yingchun Fu,Guowei Han,Yongmei Zhao,Jin Ning,Zhenyu Wei,Fuhua Yang..A new DRIE cut-off material in SOG MEMS process[J].半导体学报:英文版,2023,44(4):P.98-102,5.

基金项目

the Laboratory Open Fund of Beijing Smart-chip Microelectronics Technology Co.,Ltd and Chinese National Science Foundation(Contract No.52075519 and 61974136). (Contract No.52075519 and 61974136)

半导体学报:英文版

OACSCDCSTPCDEI

1674-4926

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