红外与毫米波学报2023，Vol.42Issue(2)：149-155,7.DOI:10.11972/j.issn.1001-9014.2023.02.002
碲镉汞表面处理中异常现象的分析及控制
Analysis and control of abnormal phenomena in HgCdTe surface treatment
摘要
Abstract
The surface treatment is the beginning of the manufacturing process of HgCdTe infrared detector chip, and its quality will directly affect the yield of the chip. The mechanisms of four typical surface anomalies in the HgCdTe surface treatment process were explored using metallographic microscope, scanning electron microscope (SEM) and X-ray photoelectron spectroscopy (XPS) analysis methods, and the corresponding control measures are proposed. The water mark defect is triggered by oxygen absorption corrosion, and this defect can be con? trolled by rapidly drying the HgCdTe surface with a stable nitrogen gas flow. The staining is induced by the corro? sive liquid unevenly diluted or contaminated by impurities such as water. To reduce the probability of staining, the contamination should be strictly avoided in the process, and the surface should be quickly rinsed after corro? sion finish. The round spot originates from the adsorption of the cleaning solution at the material defect, which can be controlled via using isopropanol to soak the HgCdTe before drying. When toluene is in direct contact with HgCdTe, the surface roughness of HgCdTe will increase, thus this direct contact should be restricted.关键词
碲镉汞/表面处理/水痕缺陷/染色现象/圆斑现象/过粗糙现象Key words
HgCdTe/surface treatment/water marks/staining/round spot/over-roughness分类
信息技术与安全科学引用本文复制引用
刘艳珍,郭建华,李树杰,张应旭,辛永刚,李志华,林阳,李雄军,秦强,蒋俊..碲镉汞表面处理中异常现象的分析及控制[J].红外与毫米波学报,2023,42(2):149-155,7.基金项目
Supported by Yunnan Science and Technology Talents and Platform Project(202105AD160047) （202105AD160047）
