红外与毫米波学报2023，Vol.42Issue(2)：162-168,7.DOI:10.11972/j.issn.1001-9014.2023.02.004
具有界面依赖光致发光的双层WS2/Ga2O3异质结的能带工程
Band alignment engineering of bilayer WS2/Ga2O3 heterostructures with interface-dependent photoluminescence
摘要
Abstract
The hetero-interface induced anomalous photoluminescence (PL) emissions in the vertical WS2/ Ga2O3 heterostructures was demonstrated. The WS2/Ga2O3 hetero-interface varies type-Ⅱ band structure and brings subsequent PL decline in the bottom WS2 monolayer contacted with Ga2O3 layer. Such hetero-interlayer coupling interaction between oxides and 2D layered transition metal dichalcogenides (TMDs) in the stacked heterostruc? tures impacts interlayer interaction between the bottom WS2 monolayer and the upper WS2 monolayer in a WS2 bi? layer, which leads to an anomalous PL enhancement in the bilayer WS2. Stacked hetero-interface will benefit for controlling the optical or electronic behavior and modulating energy band structures by customizing transformative 2D heterostructures used in next-generation nanoscale optoelectronic detectors and photodetectors.关键词
二硫化钨/氧化镓/异质结/界面/光致发光Key words
WS2/Ga2O3/heterostructure/interface/photoluminescence分类
数理科学引用本文复制引用
杨万丽,黄田田,张乐鹏,徐沛然,姜聪,李天信,陈志民,陈鑫,戴宁..具有界面依赖光致发光的双层WS2/Ga2O3异质结的能带工程[J].红外与毫米波学报,2023,42(2):162-168,7.基金项目
Supported by National Natural Science Foundation of China(92064014,11933006),Science and Technology Commission of Shanghai Municipality(18J1414900)and Youth Innovation Promotion Association CAS （92064014,11933006）
