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Study of surface morphology in GaAs by hydrogen and helium implantation at elevated temperature

Rui Huang Zhiyong Wang Hui Li Qing Wang Yecai Guo

半导体学报（英文版）2023，Vol.44Issue(5)：33-40,8.

半导体学报（英文版）2023，Vol.44Issue(5)：33-40,8.DOI:10.1088/1674-4926/44/5/052102

Study of surface morphology in GaAs by hydrogen and helium implantation at elevated temperature

Rui Huang ¹Zhiyong Wang ²Hui Li ¹Qing Wang ¹Yecai Guo¹

作者信息

1. School of Electronic and Information Engineering,Wuxi University,Wuxi 214105,China
2. Institute of Advanced Technology on Semiconductor Optics&Electronics,Institute of Laser Engineering,Beijing University of Technology,Beijing 100124,China
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摘要

关键词

surface morphology/internal defect evolution/surface stress/bubbles and defects

Key words

surface morphology/internal defect evolution/surface stress/bubbles and defects

引用本文复制引用

Rui Huang,Zhiyong Wang,Hui Li,Qing Wang,Yecai Guo..Study of surface morphology in GaAs by hydrogen and helium implantation at elevated temperature[J].半导体学报（英文版）,2023,44(5):33-40,8.

基金项目

This work is financially supported by the National Nature Science Foundation of China(Grant No.61673222)and Wuxi University Research Start-up Fund for Introduced Talents(Grant No.2022r036). （Grant No.61673222）

半导体学报（英文版）

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ISSN：1674-4926

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