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Suitable contacting scheme for evaluating electrical properties of GaN-based p-type layers

Siyi Huang Masao Ikeda Minglong Zhang Jianjun Zhu Jianping Liu

半导体学报（英文版）2023，Vol.44Issue(5)：72-79,8.

半导体学报（英文版）2023，Vol.44Issue(5)：72-79,8.DOI:10.1088/1674-4926/44/5/052802

Suitable contacting scheme for evaluating electrical properties of GaN-based p-type layers

Siyi Huang ¹Masao Ikeda ²Minglong Zhang ¹Jianjun Zhu ²Jianping Liu¹

作者信息

1. School of Nano-Tech and Nano-Bionics,University of Science and Technology of China,Hefei 230026,China||Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China||Key Laboratory of Nanodevices and Applications,Chinese Academy of Sciences,Suzhou 215123,China
2. Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China||Key Laboratory of Nanodevices and Applications,Chinese Academy of Sciences,Suzhou 215123,China
折叠

摘要

关键词

GaN/electrical properties/ohmic contact

Key words

GaN/electrical properties/ohmic contact

引用本文复制引用

Siyi Huang,Masao Ikeda,Minglong Zhang,Jianjun Zhu,Jianping Liu..Suitable contacting scheme for evaluating electrical properties of GaN-based p-type layers[J].半导体学报（英文版）,2023,44(5):72-79,8.

基金项目

This work was financially supported by the National Key Research and Development Program of China(2017YFE0131500),the Key Research and Development Pro-gram of Guangdong Province(2020B090922001),National Nat-ural Science Foundation of China(61834008,62150710548),Key Research and Development Program of Jiangsu province(BE2020004,BE2021008-1),Guangdong Basic and Applied Ba-sic Research Foundation(2019B1515120091).We are thank-ful for the technical support from Nano Fabrication Facility,Platform for Characterization&Test,and Nano-X of SINANO,CAS. （2017YFE0131500）

半导体学报（英文版）

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ISSN：1674-4926

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