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Volatile threshold switching memristor:An emerging enabler in the AIoT era

Wenbin Zuo Qihang Zhu Yuyang Fu Yu Zhang Tianqing Wan Yi Li Ming Xu Xiangshui Miao

半导体学报（英文版）2023，Vol.44Issue(5)：135-158,24.

半导体学报（英文版）2023，Vol.44Issue(5)：135-158,24.DOI:10.1088/1674-4926/44/5/053102

Volatile threshold switching memristor:An emerging enabler in the AIoT era

Wenbin Zuo ¹Qihang Zhu ²Yuyang Fu ³Yu Zhang ²Tianqing Wan ⁴Yi Li ¹Ming Xu ¹Xiangshui Miao¹

作者信息

1. Hubei Key Laboratory for Advanced Memories,School of Integrated Circuits,Huazhong University of Science and Technology,Wuhan 430074,China||Hubei Yangtze Memory Laboratories,Wuhan 430205,China
2. Hubei Key Laboratory for Advanced Memories,School of Integrated Circuits,Huazhong University of Science and Technology,Wuhan 430074,China
3. School of Microelectronics and Faculty of Physics and Electronics Science,Hubei University,Wuhan 430062,China
4. Department of Applied Physics,The Hong Kong Polytechnic University,Hong Kong,China
折叠

摘要

关键词

AIoT/threshold switching/memristor/selector/neuromorphic computing/hardware security

Key words

AIoT/threshold switching/memristor/selector/neuromorphic computing/hardware security

引用本文复制引用

Wenbin Zuo,Qihang Zhu,Yuyang Fu,Yu Zhang,Tianqing Wan,Yi Li,Ming Xu,Xiangshui Miao..Volatile threshold switching memristor:An emerging enabler in the AIoT era[J].半导体学报（英文版）,2023,44(5):135-158,24.

基金项目

This study was supported by the STI 2030—Major Projects(Grant No.2021ZD0201201),National Natural Sci-ence Foundation of China(Grant No.92064012),and Hubei Province Postdoctoral Innovation Research Program(Grant No.0106182103). （Grant No.2021ZD0201201）

半导体学报（英文版）

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ISSN：1674-4926

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