半导体学报（英文版）2023，Vol.44Issue(6)：1-3,3.DOI:10.1088/1674-4926/44/6/060101
Preface to Special Issue on Towards High Performance Ga2O3 Electronics:Epitaxial Growth and Power Devices(Ⅰ)
Preface to Special Issue on Towards High Performance Ga2O3 Electronics:Epitaxial Growth and Power Devices(Ⅰ)
Genquan Han 1Shibing Long 2Yuhao Zhang 3Yibo Wang 4Zhongming Wei5
作者信息
- 1. School of Microelectronics,Xidian University,Xi'an 710071,China
- 2. School of Microelectronics,University of Science and Technology of China,Hefei 230026,China
- 3. Center for Power Electronics Systems(CPES),Virginia Polytechnic Institute and State University,Blacksburg,VA 24060,USA
- 4. Platform for Characterization&Test,Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO),Chinese Academy of Sciences,Suzhou 215123,China
- 5. Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
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Genquan Han,Shibing Long,Yuhao Zhang,Yibo Wang,Zhongming Wei..Preface to Special Issue on Towards High Performance Ga2O3 Electronics:Epitaxial Growth and Power Devices(Ⅰ)[J].半导体学报（英文版）,2023,44(6):1-3,3.
