首页|期刊导航|半导体学报（英文版）|A comprehensive review of recent progress on enhancement-mode β-Ga2O3 FETs:Growth,devices and properties

A comprehensive review of recent progress on enhancement-mode β-Ga2O3 FETs:Growth,devices and properties

Botong Li Chunhong Zeng Tao Ju Zhongming Zeng Baoshun Zhang Xiaodong Zhang Li Zhang Yongjian Ma Wenbo Tang Tiwei Chen Yu Hu Xin Zhou Chunxu Bian

半导体学报（英文版）2023，Vol.44Issue(6)：7-23,17.

半导体学报（英文版）2023，Vol.44Issue(6)：7-23,17.DOI:10.1088/1674-4926/44/6/061801

A comprehensive review of recent progress on enhancement-mode β-Ga2O3 FETs:Growth,devices and properties

Botong Li ¹Chunhong Zeng ²Tao Ju ²Zhongming Zeng ¹Baoshun Zhang ¹Xiaodong Zhang ¹Li Zhang ³Yongjian Ma ¹Wenbo Tang ¹Tiwei Chen ¹Yu Hu ¹Xin Zhou ²Chunxu Bian²

作者信息

1. School of Nano Technology and Nano Bionics,University of Science and Technology of China,Hefei 230026,China||Nano Fabrication Facility,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China
2. Nano Fabrication Facility,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China
3. School of Nano Technology and Nano Bionics,University of Science and Technology of China,Hefei 230026,China
折叠

摘要

关键词

enhancement mode/FETs/β-Ga2O3

Key words

enhancement mode/FETs/β-Ga2O3

引用本文复制引用

Botong Li,Chunhong Zeng,Tao Ju,Zhongming Zeng,Baoshun Zhang,Xiaodong Zhang,Li Zhang,Yongjian Ma,Wenbo Tang,Tiwei Chen,Yu Hu,Xin Zhou,Chunxu Bian..A comprehensive review of recent progress on enhancement-mode β-Ga2O3 FETs:Growth,devices and properties[J].半导体学报（英文版）,2023,44(6):7-23,17.

基金项目

This work was supported in part by the National Basic Research Program of China(Grant No.2021YFB3600202),Key Laboratory Construction Project of Nanchang(Grant No.2020-NCZDSY-008),the Jiangxi Province Double Thousand Plan(Grant No.S2019CQKJ2638),and the Suzhou Science and Technology Foundation(Grant No.SYG202027). （Grant No.2021YFB3600202）

半导体学报（英文版）

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ISSN：1674-4926

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