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Recent advances in NiO/Ga2O3 heterojunctions for power electronics

Xing Lu Yuxin Deng Yanli Pei Zimin Chen Gang Wang

半导体学报（英文版）2023，Vol.44Issue(6)：24-38,15.

半导体学报（英文版）2023，Vol.44Issue(6)：24-38,15.DOI:10.1088/1674-4926/44/6/061802

Recent advances in NiO/Ga2O3 heterojunctions for power electronics

Xing Lu ¹Yuxin Deng ¹Yanli Pei ¹Zimin Chen ¹Gang Wang¹

作者信息

1. State Key Laboratory of Optoelectronic Materials and Technologies,School of Electronics and Information Technology,Sun Yat-Sen University,Guangzhou 510275,China
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摘要

关键词

gallium oxide(Ga2O3)/nickel oxide(NiO)/heterojunction/power devices

Key words

gallium oxide(Ga2O3)/nickel oxide(NiO)/heterojunction/power devices

引用本文复制引用

Xing Lu,Yuxin Deng,Yanli Pei,Zimin Chen,Gang Wang..Recent advances in NiO/Ga2O3 heterojunctions for power electronics[J].半导体学报（英文版）,2023,44(6):24-38,15.

基金项目

This work was supported by the Guangdong Basic and Applied Basic Research Foundation under Grant No. （）

半导体学报（英文版）

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ISSN：1674-4926

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