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Homoepitaxial growth of(100)Si-doped β-Ga2O3 films via MOCVD

Wenbo Tang Yu Hu Duanyang Chen Hongji Qi Zhongming Zeng Baoshun Zhang Xueli Han Xiaodong Zhang Botong Li Yongjian Ma Li Zhang Tiwei Chen Xin Zhou Chunxu Bian

半导体学报（英文版）2023，Vol.44Issue(6)：39-45,7.
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半导体学报（英文版）2023，Vol.44Issue(6)：39-45,7.DOI:10.1088/1674-4926/44/6/062801

Homoepitaxial growth of(100)Si-doped β-Ga2O3 films via MOCVD

Homoepitaxial growth of(100)Si-doped β-Ga2O3 films via MOCVD

Wenbo Tang 1Yu Hu 1Duanyang Chen 2Hongji Qi 3Zhongming Zeng 1Baoshun Zhang 1Xueli Han 3Xiaodong Zhang 1Botong Li 1Yongjian Ma 1Li Zhang 4Tiwei Chen 1Xin Zhou 4Chunxu Bian4

作者信息

  • 1. School of Nano-Tech and Nano-Bionics,University of Science and Technology of China,Hefei 230026,China||Nanofabrication facility,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China
  • 2. Research Center of Laser Crystal,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China
  • 3. Research Center of Laser Crystal,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China||Hangzhou Institute of Optics and Fine Mechanics,Hangzhou 311421,China
  • 4. Nanofabrication facility,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China
  • 折叠

摘要

关键词

homoepitaxial growth/MOCVD/Si-doping films/high activation efficiency/Ohmic contacts

Key words

homoepitaxial growth/MOCVD/Si-doping films/high activation efficiency/Ohmic contacts

引用本文复制引用

Wenbo Tang,Yu Hu,Duanyang Chen,Hongji Qi,Zhongming Zeng,Baoshun Zhang,Xueli Han,Xiaodong Zhang,Botong Li,Yongjian Ma,Li Zhang,Tiwei Chen,Xin Zhou,Chunxu Bian..Homoepitaxial growth of(100)Si-doped β-Ga2O3 films via MOCVD[J].半导体学报（英文版）,2023,44(6):39-45,7.

基金项目

This work was supported in part by the National Basic Research Program of China(Grant No.2021YFB3600202),Key Laboratory Construction Project of Nanchang(Grant No.2020-NCZDSY-008),Jiangxi Province Double Thousand Plan(Grant No.S2019CQKJ2638),Suzhou Science and Technology Foundation(Grant No.SYG202027).The authors would like to thank Nano Fabrication Facility and Vacuum Interconnected Nanotech Workstation(NANO-X)of Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences for their technical support.And thank Hangzhou Fujia Gallium Technology Co.,Ltd.for its help in crystal growth. （Grant No.2021YFB3600202）

半导体学报（英文版）

OACSCDCSTPCDEI

1674-4926

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