首页|期刊导航|半导体学报(英文版)|Exploring heteroepitaxial growth and electrical properties of α-Ga2O3 films on differently oriented sapphire substrates
半导体学报(英文版)2023,Vol.44Issue(6):46-51,6.DOI:10.1088/1674-4926/44/6/062802
Exploring heteroepitaxial growth and electrical properties of α-Ga2O3 films on differently oriented sapphire substrates
Exploring heteroepitaxial growth and electrical properties of α-Ga2O3 films on differently oriented sapphire substrates
摘要
关键词
gallium oxide/thin film epitaxy/orientation/oxygen vacancy/electrical propertiesKey words
gallium oxide/thin film epitaxy/orientation/oxygen vacancy/electrical properties引用本文复制引用
Wei Wang,Jichun Ye,Shudong Hu,Zilong Wang,Kaisen Liu,Jinfu Zhang,Simiao Wu,Yuxia Yang,Ning Xia,Wenrui Zhang..Exploring heteroepitaxial growth and electrical properties of α-Ga2O3 films on differently oriented sapphire substrates[J].半导体学报(英文版),2023,44(6):46-51,6.基金项目
This research was supported by the Zhejiang Provincial Natural Science Foundation under(Grant No.LZ21F040001),the Pioneer Hundred Talents Program of Chinese Academy of Sciences,the Ningbo Yongjiang Talent Introduction Pro-gramme and the Ningbo Key Scientific and Technological Project(Grant No.2022Z016). (Grant No.LZ21F040001)