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Rapid epitaxy of 2-inch and high-quality α-Ga2O3 films by mist-CVD method

Xiaojie Wang Wenxiang Mu Jiahui Xie Jinteng Zhang Yang Li Zhitai Jia Xutang Tao

半导体学报（英文版）2023，Vol.44Issue(6)：52-58,7.

半导体学报（英文版）2023，Vol.44Issue(6)：52-58,7.DOI:10.1088/1674-4926/44/6/062803

Rapid epitaxy of 2-inch and high-quality α-Ga2O3 films by mist-CVD method

Xiaojie Wang ¹Wenxiang Mu ²Jiahui Xie ¹Jinteng Zhang ¹Yang Li ¹Zhitai Jia ³Xutang Tao²

作者信息

1. State Key Laboratory of Crystal Materials,Institute of novel semiconductors,Institute of Crystal materials,Shandong University,Jinan 250100,China
2. State Key Laboratory of Crystal Materials,Institute of novel semiconductors,Institute of Crystal materials,Shandong University,Jinan 250100,China||Shenzhen Research Institute of Shandong University,Shenzhen 518057,China
3. State Key Laboratory of Crystal Materials,Institute of novel semiconductors,Institute of Crystal materials,Shandong University,Jinan 250100,China||Shandong Research Institute of Industrial Technology,Jinan 250101,China
折叠

摘要

关键词

ultra-wide bandgap semiconductor/mist-chemical vapor deposition/epitaxy/alpha-gallium oxide

Key words

ultra-wide bandgap semiconductor/mist-chemical vapor deposition/epitaxy/alpha-gallium oxide

引用本文复制引用

Xiaojie Wang,Wenxiang Mu,Jiahui Xie,Jinteng Zhang,Yang Li,Zhitai Jia,Xutang Tao..Rapid epitaxy of 2-inch and high-quality α-Ga2O3 films by mist-CVD method[J].半导体学报（英文版）,2023,44(6):52-58,7.

基金项目

National Natural Science Foundation of China(Grant Nos.52002219,51932004 and 61975098),Key-Area Research and Development Program of Guangdong Province(Grant No.2020B010174002),Shenzhen Fundamental Research Pro-gram(Grant No.JCYJ20210324132014038),Natural Science Foundation of Shandong(Grant No.ZR202105230005)and the 111 Project 2.0(Grant No.BP2018013). （Grant Nos.52002219,51932004 and 61975098）

半导体学报（英文版）

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ISSN：1674-4926

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