首页|期刊导航|半导体学报（英文版）|Investigation of β-Ga2O3 thick films grown on c-plane sapphire via carbothermal reduction
半导体学报（英文版）2023，Vol.44Issue(6)：59-64,6.DOI:10.1088/1674-4926/44/6/062804
Investigation of β-Ga2O3 thick films grown on c-plane sapphire via carbothermal reduction
Investigation of β-Ga2O3 thick films grown on c-plane sapphire via carbothermal reduction
摘要
关键词
β-Ga2O3 epitaxy/carbothermal reduction method/growth parametersKey words
β-Ga2O3 epitaxy/carbothermal reduction method/growth parameters引用本文复制引用
Liyuan Cheng,Hezhi Zhang,Wenhui Zhang,Hongwei Liang..Investigation of β-Ga2O3 thick films grown on c-plane sapphire via carbothermal reduction[J].半导体学报（英文版）,2023,44(6):59-64,6.基金项目
This work was supported by the National Natural Sci-ence Foundation of China under Grant 62104024,Grant 11875097,Grant 12075045,Grant 11975257,Grant 11961141014,and Grant 62074146 （）
the Fundamental Research Funds for the Central Universities under Grant DUT19RC(3)074 （3）
the Natural Science Foundation of Liaoning Province under Grant 2021MS124,Grant 2022020474-JH2/1013. （）
