红外与毫米波学报2023，Vol.42Issue(3)：306-310,5.DOI:10.11972/j.issn.1001-9014.2023.03.004
InAs基室温中波红外探测器的液相外延生长
Liquid Phase Epitaxy(LPE)growth of the room-temperature InAs-based mid-infrared photodetector
摘要
Abstract
The material quality is very important to obtain the high performance infrared detector.It is presented that the key issue of the material quality is to control the lattice mismatch between the layers of the device architec-ture.The effects of the lattice mismatch on the material quality and the dark current characteristics were reported.In the InAs/InAsSbP system grown by LPE technology,there is an appropriate value for the lattice mismatch be-tween InAsSbP and InAs.If the lattice mismatch deviates from this value,no matter whether it is smaller or larg-er,the material quality will deteriorate.Then it was stated how to adjust growth parameters to obtain the appropri-ate lattice mismatch.The infrared detector made from the device architecture with the appropriate lattice mis-match was fabricated,and the room-temperature peak detectivity of this detector is 6.8×109 cm Hz1/2W-1 at zero bi-as,which is comparable with that of international commercial InAs photodetectors.关键词
半导体四元合金/红外探测器/液相外延/晶格失配Key words
semiconducting quaternary alloys/infrared detector/liquid phase epitaxy/lattice mismatch分类
数理科学引用本文复制引用
陈泽中,段永飞,林虹宇,张振宇,谢浩,孙艳,胡淑红,戴宁..InAs基室温中波红外探测器的液相外延生长[J].红外与毫米波学报,2023,42(3):306-310,5.基金项目
Supported by the National Natural Science Foundation of China(11933006),the Frontier Science Research Project(Key Programs)of the Chinese Academy of Sciences(QYZDJ-SSW-SLH018),the National Natural Science Foundation of China(U2141240) （11933006）
