红外与毫米波学报2023，Vol.42Issue(3)：339-344,6.DOI:10.11972/j.issn.1001-9014.2023.03.007
应用于宽带的AlGaN/GaN MIS-HEMT高效率器件
High power added efficiency AlGaN/GaN MIS-HEMTs for wide band application
摘要
Abstract
In this study,we report a new design of GaN metal insulation semiconductor-high electron mobility transistor(MIS-HEMT)device with a 5 nm high-quality SiNX dielectric layer deposited between gate and AlGaN barrier layer,to reduce the gate reverse leakage and improve power added efficiency(PAE).Superior characteris-tics of the device are proved in DC,small signal and large signal tests,showing the improved device owing a high-quality interface,a wide-control-range gate,the capability to control current collapse and the ability to main-tain high PAE when serving at frequency higher than 5 GHz.Serving at 5 GHz with VDS = 10 V,the device showed an output power of 1.4 W/mm,with PAE of 74.4%;when VDS rises to 30 V,output power increases to 5.9 W/mm with PAE remaining at 63.2%;a high PAE(50.4%)remained even when the test frequency in-creased 30 GHz while keeping the same output power.Additionally,the high-quality gate dielectric layer allows the device to withstand a wide gate voltage swing:the gate current remained 10-4 A/mm even gain compressed to 6 dB.The results demonstrate the improvement of the SiNx on MIS-HEMT device,which provides device-level guarantee for the power application of the system and the design of broadband circuits.关键词
MIS-HEMTs/SiNx栅介质/功率附加效率/栅压摆幅/宽带Key words
metal-insulator-semiconductor High Electron Mobility Transistors(MIS-HEMTs)/power added efficiency(PAE)/broadband/compressed gain/gate voltage swing分类
数理科学引用本文复制引用
陈晓娟,张昇,张一川,李艳奎,高润华,刘新宇,魏珂..应用于宽带的AlGaN/GaN MIS-HEMT高效率器件[J].红外与毫米波学报,2023,42(3):339-344,6.基金项目
Supported by the National Natural Science Foundation of China(61822407,62074161,62004213) （61822407,62074161,62004213）
the National Key Research and De-velopment Program of China under(2018YFE0125700) （2018YFE0125700）
