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Notch-δ-doped InP Gunn diodes for low-THz band applications

Duu Sheng Ong Siti Amiera Mohd Akhbar Kan Yeep Choo

电子科技学刊2023,Vol.21Issue(2):30-43,14.
电子科技学刊2023,Vol.21Issue(2):30-43,14.DOI:10.1016/j.jnlest.2023.100203

Notch-δ-doped InP Gunn diodes for low-THz band applications

Notch-δ-doped InP Gunn diodes for low-THz band applications

Duu Sheng Ong 1Siti Amiera Mohd Akhbar 1Kan Yeep Choo1

作者信息

  • 1. Faculty of Engineering,Multimedia University,Cyberjaya,63100,Malaysia
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摘要

关键词

Gunn diode/δ-doped/Monte Carlo/Indium phosphide(InP)/Terahertz source

Key words

Gunn diode/δ-doped/Monte Carlo/Indium phosphide(InP)/Terahertz source

引用本文复制引用

Duu Sheng Ong,Siti Amiera Mohd Akhbar,Kan Yeep Choo..Notch-δ-doped InP Gunn diodes for low-THz band applications[J].电子科技学刊,2023,21(2):30-43,14.

电子科技学刊

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1674-862X

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