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Tunneling via surface dislocation in W/β-Ga2O3 Schottky barrier diodes

Madani Labed Ji Young Min Amina Ben Slim Nouredine Sengouga Chowdam Venkata Prasad Sinsu Kyoung You Seung Rim

半导体学报（英文版）2023，Vol.44Issue(7)：23-27,5.

半导体学报（英文版）2023，Vol.44Issue(7)：23-27,5.DOI:10.1088/1674-4926/44/7/072801

Tunneling via surface dislocation in W/β-Ga2O3 Schottky barrier diodes

Madani Labed ¹Ji Young Min ¹Amina Ben Slim ²Nouredine Sengouga ²Chowdam Venkata Prasad ¹Sinsu Kyoung ³You Seung Rim⁴

作者信息

1. Department of Intelligent Mechatronics Engineering,Sejong University,Seoul 05006,Republic of Korea
2. Laboratory of Semiconducting and Metallic Materials(LMSM),University of Biskra,Biskra 07000,Algeria
3. Research and Development,Powercubesemi Inc.,Sujeong-gu,Seongnam-si,Gyeonggi-do 13449,Republic of Korea
4. Department of Intelligent Mechatronics Engineering,Sejong University,Seoul 05006,Republic of Korea||Department of Semiconductor Systems Engineering,Sejong University,Seoul 05006,Republic of Korea
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摘要

关键词

β-Ga2O3/SBD/SBD paramatters/tungsten/low temperature/tunneling via dislocation

Key words

β-Ga2O3/SBD/SBD paramatters/tungsten/low temperature/tunneling via dislocation

引用本文复制引用

Madani Labed,Ji Young Min,Amina Ben Slim,Nouredine Sengouga,Chowdam Venkata Prasad,Sinsu Kyoung,You Seung Rim..Tunneling via surface dislocation in W/β-Ga2O3 Schottky barrier diodes[J].半导体学报（英文版）,2023,44(7):23-27,5.

基金项目

This work was supported by the National Research Founda-tion of Korea(NRF)grant funded by the Korea government(MSIT)(No.2020R1A2C1013693)and the Technology Innova-tion Program(20016102,Development of 1.2kV Gallium oxide power semiconductor devices technology and RS-2022-00144027,Development of 1.2kV-class low-loss gallium oxide transistor)by the Ministry of Trade,Industry,and Energy(MOTIE,Korea). （NRF）

半导体学报（英文版）

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ISSN：1674-4926

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