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2.83-kV double-layered NiO/β-Ga2O3 vertical p-n heterojunction diode with a power figure-of-merit of 5.98 GW/cm2

Tingting Han Yuangang Wang Yuanjie Lv Shaobo Dun Hongyu Liu Aimin Bu Zhihong Feng

半导体学报（英文版）2023，Vol.44Issue(7)：28-31,4.
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半导体学报（英文版）2023，Vol.44Issue(7)：28-31,4.DOI:10.1088/1674-4926/44/7/072802

2.83-kV double-layered NiO/β-Ga2O3 vertical p-n heterojunction diode with a power figure-of-merit of 5.98 GW/cm2

2.83-kV double-layered NiO/β-Ga2O3 vertical p-n heterojunction diode with a power figure-of-merit of 5.98 GW/cm2

Tingting Han 1Yuangang Wang 1Yuanjie Lv 1Shaobo Dun 1Hongyu Liu 1Aimin Bu 1Zhihong Feng1

作者信息

  • 1. National Key Laboratory of Application Specific Integrated Circuit(ASIC),Hebei Semiconductor Research Institute,Shijiazhuang 050051,China
  • 折叠

摘要

关键词

β-Ga2O3/breakdown voltage/heterojunction diode(HJD)/junction termination extension(JTE)/power figure-of-merit(PFOM)

Key words

β-Ga2O3/breakdown voltage/heterojunction diode(HJD)/junction termination extension(JTE)/power figure-of-merit(PFOM)

引用本文复制引用

Tingting Han,Yuangang Wang,Yuanjie Lv,Shaobo Dun,Hongyu Liu,Aimin Bu,Zhihong Feng..2.83-kV double-layered NiO/β-Ga2O3 vertical p-n heterojunction diode with a power figure-of-merit of 5.98 GW/cm2[J].半导体学报（英文版）,2023,44(7):28-31,4.

基金项目

This work was supported by the National Natural Sci-ence Foundation of China under Grant U21A20503. （）

半导体学报（英文版）

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