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Experimental investigation on the instability for NiO/β-Ga2O3 heterojunction-gate FETs under negative bias stress

Zhuolin Jiang Xiangnan Li Xuanze Zhou Yuxi Wei Jie Wei Guangwei Xu Shibing Long Xiaorong Luo

半导体学报（英文版）2023，Vol.44Issue(7)：32-36,5.

半导体学报（英文版）2023，Vol.44Issue(7)：32-36,5.DOI:10.1088/1674-4926/44/7/072803

Experimental investigation on the instability for NiO/β-Ga2O3 heterojunction-gate FETs under negative bias stress

Zhuolin Jiang ¹Xiangnan Li ¹Xuanze Zhou ²Yuxi Wei ¹Jie Wei ¹Guangwei Xu ²Shibing Long ²Xiaorong Luo¹

作者信息

1. State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China
2. School of Microelectronics,University of Science and Technology of China,Hefei 230026,China
折叠

摘要

关键词

NiO/β-Ga2O3 heterojunction/FET/NBS/instability/bulk traps/interface dipoles

Key words

NiO/β-Ga2O3 heterojunction/FET/NBS/instability/bulk traps/interface dipoles

引用本文复制引用

Zhuolin Jiang,Xiangnan Li,Xuanze Zhou,Yuxi Wei,Jie Wei,Guangwei Xu,Shibing Long,Xiaorong Luo..Experimental investigation on the instability for NiO/β-Ga2O3 heterojunction-gate FETs under negative bias stress[J].半导体学报（英文版）,2023,44(7):32-36,5.

基金项目

This work was supported by the Fundamental Strengthen-ing Program Key Basic Research Project(Grant No.2021-173ZD-057). （Grant No.2021-173ZD-057）

半导体学报（英文版）

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ISSN：1674-4926

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