红外与毫米波学报2023，Vol.42Issue(4)：468-475,8.DOI:10.11972/j.issn.1001-9014.2023.04.007
波长拓展型InGaAsBi近红外探测器
Wavelength extended InGaAsBi near infrared photodetector
摘要
Abstract
InGaAs photodetector is widely used in SWIR detection.Bi incorporation into InGaAs can reduce the bandgap,extending the detection wavelength.By controlling of the In and Bi compositions,the detection wave-length could be extended to over 3 μm from InyGa1-yAs1-xBix,lattice-matched to InP.An In0.394Ga0.606As0.913Bi0.087 p-i-n photodetector is designed and its performance is numerically investigated.Dark currents and responsivity spec-tra are calculated with different temperatures,absorption layer thicknesses and doping concentrations.A 50%cut-off wavelength of 3 μm is achieved.The proposed structure provides a feasible way to fabricate InGaAsBi based SWIR detector with longer detection wavelength.关键词
铟镓砷铋/暗电流/响应率/短波红外Key words
InGaAsBi/dark current/responsivity/SWIR分类
信息技术与安全科学引用本文复制引用
冯铎,代金梦,曹有祥,张立瑶..波长拓展型InGaAsBi近红外探测器[J].红外与毫米波学报,2023,42(4):468-475,8.基金项目
Supported by the National Natural Science Foundation of China(61904106) （61904106）
