红外与毫米波学报2023，Vol.42Issue(4)：483-489,7.DOI:10.11972/j.issn.1001-9014.2023.04.009
带有原位生长SiNx绝缘层的AlN/GaN毫米波高效率MIS-HEMT器件
High-efficiency AlN/GaN MIS-HEMTs with SiNx insulator grown in-situ for millimeter wave applications
摘要
Abstract
In this work,high-efficiency AlN/GaN metal-insulator-semiconductor high electron mobility transis-tors(MIS-HEMTs)have been fabricated for millimeter wave applications.A 5-nm SiNx insulator is grown in-situ as the gate insulator by metal-organic chemical vapor deposition(MOCVD),contributing to remarkably sup-pressed gate leakage,interface state density and current collapse.The fabricated MIS-HEMTs exhibit a maximum drain current of 2.2 A/mm at VGS=2 V,an extrinsic peak Gm of 509 mS/mm,and a reverse Schottky gate leakage current of 4.7×10-6 A/mm when VGS =-30 V.Based on a 0.15 μm T-shaped gate technology,an fT of 98 GHz and fMAX of 165 GHz were obtained on the SiN/AlN/GaN MIS-HEMTs.Large signal measurement shows that,in a continuous-wave mode,the MIS-HEMTs deliver an output power density(Pout)of 2.3 W/mm associated with a power-added efficiency(PAE)of 45.2%at 40 GHz,and a Pout(PAE)of 5.2 W/mm(42.2%)when VDS was fur-ther increased to 15 V.关键词
AlN/GaN/金属绝缘体半导体高电子迁移率晶体管/Ka波段/低损耗/低偏压Key words
AlN/GaN/metal-insulator-semiconductor High Electron Mobility Transistors(MIS-HEMTs)/millimeter wave/low dispersion/low drain voltage分类
数理科学引用本文复制引用
陈晓娟,张一川,张昇,李艳奎,牛洁斌,黄森,马晓华,张进成,魏珂..带有原位生长SiNx绝缘层的AlN/GaN毫米波高效率MIS-HEMT器件[J].红外与毫米波学报,2023,42(4):483-489,7.基金项目
Supported by the National Natural Science Foundation of China(61822407,62074161,62004213) （61822407,62074161,62004213）
the National Key Research and De-velopment Program of China under(2018YFE0125700) （2018YFE0125700）
