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Spin injection into heavily-doped n-GaN via Schottky barrier

Zhenhao Sun Weikun Ge Bo Shen Ning Tang Shuaiyu Chen Fan Zhang Haoran Fan Shixiong Zhang Rongxin Wang Xi Lin Jianping Liu

半导体学报（英文版）2023，Vol.44Issue(8)：61-65,5.
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半导体学报（英文版）2023，Vol.44Issue(8)：61-65,5.DOI:10.1088/1674-4926/44/8/082501

Spin injection into heavily-doped n-GaN via Schottky barrier

Spin injection into heavily-doped n-GaN via Schottky barrier

Zhenhao Sun 1Weikun Ge 1Bo Shen 2Ning Tang 2Shuaiyu Chen 1Fan Zhang 3Haoran Fan 4Shixiong Zhang 1Rongxin Wang 3Xi Lin 4Jianping Liu3

作者信息

  • 1. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics,School of Physics,Peking University,Beijing 100871,China
  • 2. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics,School of Physics,Peking University,Beijing 100871,China||Frontiers Science Center for Nano-optoelectronics & Collaboration Innovation Center of Quantum Matter,Peking University,Beijing 100871,China
  • 3. Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO),Chinese Academy of Sciences,Suzhou 215123,China
  • 4. International Center for Quantum Materials,Peking University,Beijing 100871,China
  • 折叠

摘要

关键词

GaN/spin injection/Schottky barrier/magnetoresistance

Key words

GaN/spin injection/Schottky barrier/magnetoresistance

引用本文复制引用

Zhenhao Sun,Weikun Ge,Bo Shen,Ning Tang,Shuaiyu Chen,Fan Zhang,Haoran Fan,Shixiong Zhang,Rongxin Wang,Xi Lin,Jianping Liu..Spin injection into heavily-doped n-GaN via Schottky barrier[J].半导体学报（英文版）,2023,44(8):61-65,5.

基金项目

This work was supported by the National Key Research and Development Program of China(Nos.2022YFB3605604,and 2018YFE0125700)and the National Natural Science Foun-dation of China(Nos.62225402,61927806,62234001,and U22A2074).The authors are grateful for the technical sup-port for Nano-X from Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences(SINANO),Chi-nese Academy of Sciences. （Nos.2022YFB3605604,and 2018YFE0125700）

半导体学报（英文版）

OACSCDCSTPCDEI

1674-4926

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