首页|期刊导航|半导体学报（英文版）|High threshold voltage enhancement-mode GaN p-FET with Si-rich LPCVD SiNx gate insulator for high hole mobility

High threshold voltage enhancement-mode GaN p-FET with Si-rich LPCVD SiNx gate insulator for high hole mobility

Liyang Zhu Kuangli Chen Ying Ma Yong Cai Chunhua Zhou Zhaoji Li Bo Zhang Qi Zhou

半导体学报（英文版）2023，Vol.44Issue(8)：83-91,9.

半导体学报（英文版）2023，Vol.44Issue(8)：83-91,9.DOI:10.1088/1674-4926/44/8/082801

High threshold voltage enhancement-mode GaN p-FET with Si-rich LPCVD SiNx gate insulator for high hole mobility

Liyang Zhu ¹Kuangli Chen ¹Ying Ma ²Yong Cai ²Chunhua Zhou ¹Zhaoji Li ¹Bo Zhang ¹Qi Zhou³

作者信息

1. State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China
2. Key Laboratory of Nanodevices and Applications,Suzhou Institute of Nano-tech and Nano-bionics,CAS,Suzhou 215123,China
3. State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China||Institute of Electronic and Information Engineering,University of Electronic Science and Technology of China,Dongguan 523808,China
折叠

摘要

关键词

p-channel/GaN p-FET/LPCVD/channel mobility/hole mobility/enhancement-mode

Key words

p-channel/GaN p-FET/LPCVD/channel mobility/hole mobility/enhancement-mode

引用本文复制引用

Liyang Zhu,Kuangli Chen,Ying Ma,Yong Cai,Chunhua Zhou,Zhaoji Li,Bo Zhang,Qi Zhou..High threshold voltage enhancement-mode GaN p-FET with Si-rich LPCVD SiNx gate insulator for high hole mobility[J].半导体学报（英文版）,2023,44(8):83-91,9.

基金项目

This work was supported in part by the Natural Science Foundation of China under Grant 62174019,in part by the Guangdong Basic and Applied Basic Research Foundation China under Grant 2021B1515140039 （）

in part by the Zhuhai Industry-University Research Cooperation Project under Grant ZH22017001210041PWC. （）

半导体学报（英文版）

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ISSN：1674-4926

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