物理学报2023，Vol.72Issue(17)：319-326,8.DOI:10.7498/aps.72.20230711
GaAs光电导开关非线性模式的雪崩畴输运机理
Mechanism of avalanche charge domain transport for nonlinear mode of GaAs photoconductive semiconductor switches
摘要
关键词
GaAs光电导开关/非线性模式/双光子吸收/光激发雪崩畴Key words
GaAs photoconductive semiconductor switches/nonlinear mode/two-photon absorption/photoactivated avalanche charge domain引用本文复制引用
田立强,潘璁,施卫,潘艺柯,冉恩泽,李存霞..GaAs光电导开关非线性模式的雪崩畴输运机理[J].物理学报,2023,72(17):319-326,8.基金项目
国家自然科学基金(批准号:61427814,61076087,41975040)和中国博士后科学基金(批准号:20100481349)资助的课题.Project supported by the National Natural Science Foundation of China(Grant Nos.61427814,61076087,41975040)and the China Postdoctoral Science Foundation(Grant No.20100481349). （批准号:61427814,61076087,41975040）
