物理学报2023，Vol.72Issue(18)：295-303,9.DOI:10.7498/aps.72.20230976
中子辐射导致的SiC功率器件漏电增加特性研究
Study on characteristics of neutron-induced leakage current increase for SiC power devices
摘要
关键词
碳化硅功率器件/中子辐照/位移损伤/深能级瞬态谱Key words
silicon carbide power device/neutron irradiation/displacement damage/deep level transient spectrum引用本文复制引用
彭超,雷志锋,张战刚,何玉娟,马腾,蔡宗棋,陈义强..中子辐射导致的SiC功率器件漏电增加特性研究[J].物理学报,2023,72(18):295-303,9.基金项目
国家自然科学基金(批准号:12075065,62274043)、广东省基础与应用基础研究基金(批准号:2021B1515120043)、广东省重点研发计划(批准号:2022B0701180002)和广州市科技计划(批准号:202201010868)资助的课题.Project supported by the National Natural Science Foundation of China(Grant Nos.12075065,62274043),the Basic and Applied Basic Research Foundation of Guangdong Province,China(Grant No.2021B1515120043),the Key-Area Research and Development Program of Guangdong Province,China(Grant No.2022B0701180002),and the Science and Technology Program of Guangzhou,China(Grant No.202201010868). （批准号:12075065,62274043）
