首页|期刊导航|半导体学报（英文版）|Low-temperature metal-oxide thin-film transistor technologies for implementing flexible electronic circuits and systems
半导体学报（英文版）2023，Vol.44Issue(9)：3-10,8.DOI:10.1088/1674-4926/44/9/091601
Low-temperature metal-oxide thin-film transistor technologies for implementing flexible electronic circuits and systems
Low-temperature metal-oxide thin-film transistor technologies for implementing flexible electronic circuits and systems
摘要
关键词
flexible electronics/metal-oxide semiconductor/thin-film transistor/dual gate/fluorination/analog front-end system/sensorsKey words
flexible electronics/metal-oxide semiconductor/thin-film transistor/dual gate/fluorination/analog front-end system/sensors引用本文复制引用
Runxiao Shi,Tengteng Lei,Zhihe Xia,Man Wong..Low-temperature metal-oxide thin-film transistor technologies for implementing flexible electronic circuits and systems[J].半导体学报（英文版）,2023,44(9):3-10,8.基金项目
This work was supported by Grant RGC 16215720 from the Science and Technology Program of Shenzhen under JCYJ20200109140601691,Grant GHP/018/21SZ from the Inno-vation and Technology Fund jointly with Grant SGDX20211123145404006 from the Science and Technology Program of Shenzhen and in part by Fundamental and Applied Fundamental Research Fund of Guangdong Province 2021B1515130001.The devices were fabricated at The Nanosystem Fabrication Facility(NFF)of The Hong Kong Uni-versity of Science and Technology. （NFF）
