半导体学报（英文版）2023，Vol.44Issue(9)：47-56,10.DOI:10.1088/1674-4926/44/9/091605
A landscape of β-Ga2O3 Schottky power diodes
A landscape of β-Ga2O3 Schottky power diodes
Man Hoi Wong1
作者信息
- 1. Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China
- 折叠
摘要
关键词
β-Ga2O3/Schottky diodes/power device/edge termination/nickel oxideKey words
β-Ga2O3/Schottky diodes/power device/edge termination/nickel oxide引用本文复制引用
Man Hoi Wong..A landscape of β-Ga2O3 Schottky power diodes[J].半导体学报（英文版）,2023,44(9):47-56,10.
