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Fluorination-mitigated high-current degradation of amorphous InGaZnO thin-film transistors

Yanxin Wang Jiye Li Fayang Liu Dongxiang Luo Yunping Wang Shengdong Zhang Lei Lu

半导体学报（英文版）2023，Vol.44Issue(9)：57-61,5.

半导体学报（英文版）2023，Vol.44Issue(9)：57-61,5.DOI:10.1088/1674-4926/44/9/092601

Fluorination-mitigated high-current degradation of amorphous InGaZnO thin-film transistors

Yanxin Wang ¹Jiye Li ¹Fayang Liu ¹Dongxiang Luo ²Yunping Wang ¹Shengdong Zhang ³Lei Lu¹

作者信息

1. School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen 518055, China
2. Huangpu Hydrogen Innovation Center/Guangzhou Key Laboratory for Clean Energy and Materials, School of Chemistry and Chemical Engineer-ing, Guangzhou University, Guangzhou 510006, China
3. School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen 518055, China||Institute of Microelectronics, Peking University, Beijing 100871, China
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摘要

关键词

amorphous indium-gallium-zinc oxide (a-IGZO)/thin-film transistors (TFTs)/current stress/self-heating (SH)/fluorination

Key words

amorphous indium-gallium-zinc oxide (a-IGZO)/thin-film transistors (TFTs)/current stress/self-heating (SH)/fluorination

引用本文复制引用

Yanxin Wang,Jiye Li,Fayang Liu,Dongxiang Luo,Yunping Wang,Shengdong Zhang,Lei Lu..Fluorination-mitigated high-current degradation of amorphous InGaZnO thin-film transistors[J].半导体学报（英文版）,2023,44(9):57-61,5.

基金项目

This research was supported by National Key Research and Development Program under Grant No.2022YFB-3607100,and Shenzhen Research Programs under Grant Nos.JCYJ20200109140601691,JCYJ20190808154803565,SGDX20201103095607022,SGDX20211123145404006,and GXWD20201231165807007-20200807025846001. （）

半导体学报（英文版）

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ISSN：1674-4926

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